Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal

Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki. Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal. Microelectronics Reliability, 49(4):357-364, 2009. [doi]

@article{FukaiKKIYE09,
  title = {Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal},
  author = {Yoshino K. Fukai and Kenji Kurishima and Norihide Kashio and Minoru Ida and Shoji Yamahata and Takatomo Enoki},
  year = {2009},
  doi = {10.1016/j.microrel.2009.01.005},
  url = {http://dx.doi.org/10.1016/j.microrel.2009.01.005},
  tags = {rule-based},
  researchr = {https://researchr.org/publication/FukaiKKIYE09},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {49},
  number = {4},
  pages = {357-364},
}