Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint - researchr publication authors

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H. Fukutome, K. Suh, W. Kim, Y. Moriyama, S. Kang, B. Eom, J. Kim, C. Yoon, W. Kwon, Y. Chung, Y. Nam, Y. Kim, S. Park, J. Park, H. J. Cho, K. Rim, S. D. Kwon. Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 369-370, IEEE, 2022. [doi]

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Jihyeok Park

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