H. Fukutome, K. Suh, W. Kim, Y. Moriyama, S. Kang, B. Eom, J. Kim, C. Yoon, W. Kwon, Y. Chung, Y. Nam, Y. Kim, S. Park, J. Park, H. J. Cho, K. Rim, S. D. Kwon. Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 369-370, IEEE, 2022. [doi]
@inproceedings{FukutomeSKMKEKY22,
title = {Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint},
author = {H. Fukutome and K. Suh and W. Kim and Y. Moriyama and S. Kang and B. Eom and J. Kim and C. Yoon and W. Kwon and Y. Chung and Y. Nam and Y. Kim and S. Park and J. Park and H. J. Cho and K. Rim and S. D. Kwon},
year = {2022},
doi = {10.1109/VLSITechnologyandCir46769.2022.9830184},
url = {https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830184},
researchr = {https://researchr.org/publication/FukutomeSKMKEKY22},
cites = {0},
citedby = {0},
pages = {369-370},
booktitle = {IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022},
publisher = {IEEE},
isbn = {978-1-6654-9772-5},
}