Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint

H. Fukutome, K. Suh, W. Kim, Y. Moriyama, S. Kang, B. Eom, J. Kim, C. Yoon, W. Kwon, Y. Chung, Y. Nam, Y. Kim, S. Park, J. Park, H. J. Cho, K. Rim, S. D. Kwon. Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 369-370, IEEE, 2022. [doi]

References

No references recorded for this publication.

Cited by

No citations of this publication recorded.