Study of hot-carrier effects on power RF LDMOS device reliability

M. Gares, M. A. Belaïd, H. Maanane, M. Masmoudi, J. Marcon, K. Mourgues, Ph. Eudeline. Study of hot-carrier effects on power RF LDMOS device reliability. Microelectronics Reliability, 47(9-11):1394-1399, 2007. [doi]

@article{GaresBMMMME07,
  title = {Study of hot-carrier effects on power RF LDMOS device reliability},
  author = {M. Gares and M. A. Belaïd and H. Maanane and M. Masmoudi and J. Marcon and K. Mourgues and Ph. Eudeline},
  year = {2007},
  doi = {10.1016/j.microrel.2007.07.064},
  url = {http://dx.doi.org/10.1016/j.microrel.2007.07.064},
  tags = {reliability},
  researchr = {https://researchr.org/publication/GaresBMMMME07},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {47},
  number = {9-11},
  pages = {1394-1399},
}