D. Godfrey, D. Nirmal, L. Arivazhagan, D. Godwinraj, N. Mohan Kumar, Yulin Chen, Wenkuan Yeh. Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate. Microelectronics Journal, 118:105293, 2021. [doi]
@article{GodfreyNAGKCY21,
title = {Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate},
author = {D. Godfrey and D. Nirmal and L. Arivazhagan and D. Godwinraj and N. Mohan Kumar and Yulin Chen and Wenkuan Yeh},
year = {2021},
doi = {10.1016/j.mejo.2021.105293},
url = {https://doi.org/10.1016/j.mejo.2021.105293},
researchr = {https://researchr.org/publication/GodfreyNAGKCY21},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {118},
pages = {105293},
}