2 SRAM in 10nm FinFET technology with pulsed PMOS TVC and stepped-WL for low-voltage applications - researchr publication authors

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Zheng Guo, Daeyeon Kim, Satyanand Nalam, Jami Wiedemer, Xiaofei Wang, Eric Karl. 2 SRAM in 10nm FinFET technology with pulsed PMOS TVC and stepped-WL for low-voltage applications. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 196-198, IEEE, 2018. [doi]

This author has not been identified. Look up 'Zheng Guo' in GoogleThis author has not been identified. Look up 'Daeyeon Kim' in GoogleThis author has not been identified. Look up 'Satyanand Nalam' in GoogleThis author has not been identified. Look up 'Jami Wiedemer' in GoogleThis author has not been identified. Look up 'Xiaofei Wang' in GoogleThis author has not been identified. Look up 'Eric Karl' in Google

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