Zheng Guo, Daeyeon Kim, Satyanand Nalam, Jami Wiedemer, Xiaofei Wang, Eric Karl. 2 SRAM in 10nm FinFET technology with pulsed PMOS TVC and stepped-WL for low-voltage applications. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 196-198, IEEE, 2018. [doi]
@inproceedings{GuoKNWWK18,
title = {2 SRAM in 10nm FinFET technology with pulsed PMOS TVC and stepped-WL for low-voltage applications},
author = {Zheng Guo and Daeyeon Kim and Satyanand Nalam and Jami Wiedemer and Xiaofei Wang and Eric Karl},
year = {2018},
doi = {10.1109/ISSCC.2018.8310251},
url = {https://doi.org/10.1109/ISSCC.2018.8310251},
researchr = {https://researchr.org/publication/GuoKNWWK18},
cites = {0},
citedby = {0},
pages = {196-198},
booktitle = {2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5090-4940-0},
}