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Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors

Tiecheng Han, Xiaocan Peng, Wenqian Zhang, Tongju Wang, Liu Yang, Peng Zhao. Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors. Microelectronics Journal, 139:105881, September 2023. [doi]

Authors

Tiecheng Han

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Xiaocan Peng

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Wenqian Zhang

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Tongju Wang

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Liu Yang

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Peng Zhao

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