Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors - researchr publication

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Tiecheng Han, Xiaocan Peng, Wenqian Zhang, Tongju Wang, Liu Yang, Peng Zhao. Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors. Microelectronics Journal, 139:105881, September 2023. [doi]

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