Tiecheng Han, Xiaocan Peng, Wenqian Zhang, Tongju Wang, Liu Yang, Peng Zhao. Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors. Microelectronics Journal, 139:105881, September 2023. [doi]
@article{HanPZWYZ23,
title = {Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors},
author = {Tiecheng Han and Xiaocan Peng and Wenqian Zhang and Tongju Wang and Liu Yang and Peng Zhao},
year = {2023},
month = {September},
doi = {10.1016/j.mejo.2023.105881},
url = {https://doi.org/10.1016/j.mejo.2023.105881},
researchr = {https://researchr.org/publication/HanPZWYZ23},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {139},
pages = {105881},
}