BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs - researchr publication authors

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Jifa Hao, Amartya Ghosh, Mark Rinehimer, Joe Yedinak, Muhammad A. Alam. BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 6, IEEE, 2018. [doi]

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