BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs

Jifa Hao, Amartya Ghosh, Mark Rinehimer, Joe Yedinak, Muhammad A. Alam. BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 6, IEEE, 2018. [doi]

@inproceedings{HaoGRYA18,
  title = {BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs},
  author = {Jifa Hao and Amartya Ghosh and Mark Rinehimer and Joe Yedinak and Muhammad A. Alam},
  year = {2018},
  doi = {10.1109/IRPS.2018.8353643},
  url = {https://doi.org/10.1109/IRPS.2018.8353643},
  researchr = {https://researchr.org/publication/HaoGRYA18},
  cites = {0},
  citedby = {0},
  pages = {6},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-5479-8},
}