BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs - researchr publication related

researchr

You are not signed in
Sign in
Sign up

Jifa Hao, Amartya Ghosh, Mark Rinehimer, Joe Yedinak, Muhammad A. Alam. BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 6, IEEE, 2018. [doi]

The following publications are possibly variants of this publication:

High temperature bias-stress-induced instability in power trench-gated MOSFETsJifa Hao, Mark Rioux, Samia A. Suliman, Osama O. Awadelkarim. mr, 54(2):374-380, 2014. [doi]

runs on WebDSL