Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions - researchr publication related

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Takayuki Hisaka, Hajime Sasaki, Yoichi Nogami, Kenji Hosogi, Naohito Yoshida, A. A. Villanueva, Jesús A. del Alamo, Shigehiko Hasegawa, Hajime Asahi. Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions. Microelectronics Reliability, 49(12):1515-1519, 2009. [doi]

The following publications are possibly variants of this publication:

Degradation mechanisms of GaAs PHEMTs in high humidity conditionsTakayuki Hisaka, Yasuki Aihara, Yoichi Nogami, Hajime Sasaki, Yasushi Uehara, Naohito Yoshida, Kazuo Hayashi. mr, 45(12):1894-1900, 2005. [doi]

Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopyHajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Yoshikazu Terai, Yasufumi Fujiwara. ieiceee, 9(20):1592-1597, 2012. [doi]

Electrical degradation mechanisms of RF power GaAs PHEMTsAnita A. Villanueva. PhD thesis, Massachusetts Institute of Technology, Cambridge, MA, USA, 2007. [doi]

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