Elimination of half select disturb in 8T-SRAM by local injected electron asymmetric pass gate transistor - researchr publication authors

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Kentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano, Ken Takeuchi. Elimination of half select disturb in 8T-SRAM by local injected electron asymmetric pass gate transistor. In Jacqueline Snyder, Rakesh Patel, Tom Andre, editors, IEEE Custom Integrated Circuits Conference, CICC 2010, San Jose, California, USA, 19-22 September, 2010, Proceedings. pages 1-4, IEEE, 2010. [doi]

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