T. Hoshii, K. Furukawa, Kuniyuki Kakushima, M. Watanabe, N. Shigvo, Takuya Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, Hitoshi Wakabayashi, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, H. Ohashi, H. Lwai. Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately. In 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018. pages 26-29, IEEE, 2018. [doi]
Abstract is missing.