Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit

Jiali Huo, Weixing Huang, Fan Zhang, Shengli Zhang, Weizhuo Gan, Qiang Huo, Yuwei Cai, Qingzhu Zhang, Yongliang Li, Huilong Zhu, Huaxiang Yin, Zhenhua Wu. Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit. Microelectronics Journal, 116:105196, 2021. [doi]

@article{HuoHZZGHCZLZYW21,
  title = {Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit},
  author = {Jiali Huo and Weixing Huang and Fan Zhang and Shengli Zhang and Weizhuo Gan and Qiang Huo and Yuwei Cai and Qingzhu Zhang and Yongliang Li and Huilong Zhu and Huaxiang Yin and Zhenhua Wu},
  year = {2021},
  doi = {10.1016/j.mejo.2021.105196},
  url = {https://doi.org/10.1016/j.mejo.2021.105196},
  researchr = {https://researchr.org/publication/HuoHZZGHCZLZYW21},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {116},
  pages = {105196},
}