Design Optimization of MV-NMOS for ESD Self-protection in 28nm CMOS technology - researchr publication authors

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Kyong Jin Hwang, Sagar Premnath Karalkar, Vishal Ganesan, Sevashanmugam Marimuthu, Alban Zaka, Tom Herrmann, Bhoopendra Singh, Robert Gauthier. Design Optimization of MV-NMOS for ESD Self-protection in 28nm CMOS technology. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-4, IEEE, 2020. [doi]

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