Masahisa Iida, Naoki Kuroda, Hidefumi Otsuka, Masanobu Hirose, Yuji Yamasaki, Kiyoto Ohta, Kazuhiko Shimakawa, Takashi Nakabayashi, Hiroyuki Yamauchi, Tomohiko Sano, Takayuki Gyohten, Masanao Maruta, Akira Yamazaki, Fukashi Morishita, Katsumi Dosaka, Masahiko Takeuchi, Kazutami Arimoto. A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning. J. Solid-State Circuits, 40(11):2296-2304, 2005. [doi]
Abstract is missing.