A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit - researchr publication authors

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Byung-gil Jeon, Mun-Kyu Choi, Yoonjong Song, Seung-Kyu Oh, Yeonbae Chung, Kang-Deog Suh, Kinam Kim. A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit. J. Solid-State Circuits, 35(11):1690-1694, 2000. [doi]

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