A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme

Gitae Jeong, Wooyoung Cho, Sujin Ahn, Hongsik Jeong, Gwanhyeob Koh, Youngnam Hwang, Kinam Kim. A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. J. Solid-State Circuits, 38(11):1906-1910, 2003. [doi]

Authors

Gitae Jeong

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Wooyoung Cho

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Sujin Ahn

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Hongsik Jeong

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Gwanhyeob Koh

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Youngnam Hwang

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Kinam Kim

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