A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme

Gitae Jeong, Wooyoung Cho, Sujin Ahn, Hongsik Jeong, Gwanhyeob Koh, Youngnam Hwang, Kinam Kim. A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. J. Solid-State Circuits, 38(11):1906-1910, 2003. [doi]

Abstract

Abstract is missing.