Z. Ji, Dimitri Linten, R. Boschke, Geert Hellings, S. H. Chen, A. Alian, D. Zhou, Y. Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, J. F. Zhang, W. Zhang, Nadine Collaert, Guido Groeseneken. ESD characterization of planar InGaAs devices. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 3, IEEE, 2015. [doi]
@inproceedings{JiLBHCAZMIFKZGZ15,
title = {ESD characterization of planar InGaAs devices},
author = {Z. Ji and Dimitri Linten and R. Boschke and Geert Hellings and S. H. Chen and A. Alian and D. Zhou and Y. Mols and Tsvetan Ivanov and Jacopo Franco and Ben Kaczer and X. Zhang and R. Gao and J. F. Zhang and W. Zhang and Nadine Collaert and Guido Groeseneken},
year = {2015},
doi = {10.1109/IRPS.2015.7112719},
url = {http://dx.doi.org/10.1109/IRPS.2015.7112719},
researchr = {https://researchr.org/publication/JiLBHCAZMIFKZGZ15},
cites = {0},
citedby = {0},
pages = {3},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7362-3},
}