Mark Johnson, Ali Al-Shamma, Derek Bosch, Matthew Crowley, Michael Farmwald, Luca Fasoli, Alper Ilkbahar, Bendik Kleveland, Thomas H. Lee, Tz-Yi Liu, Quang Nguyen, Roy Scheuerlein, Kenneth So, Tyler Thorp. 512-Mb PROM with a three-dimensional array of diode/antifuse memory cells. J. Solid-State Circuits, 38(11):1920-1928, 2003. [doi]
Abstract is missing.