Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, Kouichi Ono. Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs. In 2014 IEEE International Conference on IC Design & Technology, ICICDT 2014, Austin, TX, USA, May 28-30, 2014. pages 1-4, IEEE, 2014. [doi]

This author has not been identified. Look up 'Masayuki Kamei' in GoogleThis author has not been identified. Look up 'Yoshinori Takao' in GoogleThis author has not been identified. Look up 'Koji Eriguchi' in GoogleThis author has not been identified. Look up 'Kouichi Ono' in Google

runs on WebDSL