Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs

Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, Kouichi Ono. Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs. In 2014 IEEE International Conference on IC Design & Technology, ICICDT 2014, Austin, TX, USA, May 28-30, 2014. pages 1-4, IEEE, 2014. [doi]

Abstract

Abstract is missing.