Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs

Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, Kouichi Ono. Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs. In 2014 IEEE International Conference on IC Design & Technology, ICICDT 2014, Austin, TX, USA, May 28-30, 2014. pages 1-4, IEEE, 2014. [doi]

@inproceedings{KameiTEO14,
  title = {Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs},
  author = {Masayuki Kamei and Yoshinori Takao and Koji Eriguchi and Kouichi Ono},
  year = {2014},
  doi = {10.1109/ICICDT.2014.6838598},
  url = {http://dx.doi.org/10.1109/ICICDT.2014.6838598},
  researchr = {https://researchr.org/publication/KameiTEO14},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {2014 IEEE International Conference on IC Design & Technology, ICICDT 2014, Austin, TX, USA, May 28-30, 2014},
  publisher = {IEEE},
  isbn = {978-1-4799-2153-9},
}