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A 0.1-µm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Sangbeom Kang, Woo-Yeong Cho, Beak-Hyung Cho, KwangJin Lee, Changsoo Lee, Hyung-Rok Oh, Byung Gil Choi, Qi Wang, Hye-Jin Kim, Mu-Hui Park, Yu-Hwan Ro, Suyeon Kim, Choong-Duk Ha, Ki-Sung Kim, Young-Ran Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gitae Jeong, Hong-Sik Jeong, Kinam Kim, YunSueng Shin. A 0.1-µm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation. J. Solid-State Circuits, 42(1):210-218, 2007. [doi]

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