Wang Kang, Liang Chang, Youguang Zhang, Weisheng Zhao. Voltage-controlled MRAM for working memory: Perspectives and challenges. In David Atienza, Giorgio Di Natale, editors, Design, Automation & Test in Europe Conference & Exhibition, DATE 2017, Lausanne, Switzerland, March 27-31, 2017. pages 542-547, IEEE, 2017. [doi]
@inproceedings{KangCZZ17,
title = {Voltage-controlled MRAM for working memory: Perspectives and challenges},
author = {Wang Kang and Liang Chang and Youguang Zhang and Weisheng Zhao},
year = {2017},
doi = {10.23919/DATE.2017.7927047},
url = {https://doi.org/10.23919/DATE.2017.7927047},
researchr = {https://researchr.org/publication/KangCZZ17},
cites = {0},
citedby = {0},
pages = {542-547},
booktitle = {Design, Automation & Test in Europe Conference & Exhibition, DATE 2017, Lausanne, Switzerland, March 27-31, 2017},
editor = {David Atienza and Giorgio Di Natale},
publisher = {IEEE},
isbn = {978-3-9815370-8-6},
}