The following publications are possibly variants of this publication:
- 10-Gb/s Distributed Amplifier-Based VCSEL Driver IC With ESD Protection in 130-nm CMOSTao Zhang, Ping Gui, Sudipto Chakraborty, Tianwei Liu, Guoying Wu, Paulo Moreira, Filip Tavernier. tvlsi, 24(7):2502-2510, 2016. [doi]
- MOS-Bounded Diodes for On-Chip ESD Protection in Deep Submicron CMOS ProcessMing-Dou Ker, Kun-Hsien Lin, Che-Hao Chuang. ieicet, 88-C(3):429-436, 2005. [doi]
- Design on ESD protection scheme for IC with power-down-mode operationMing-Dou Ker, Kun-Hsien Lin. jssc, 39(8):1378-1382, 2004. [doi]
- Design to Avoid the Over-Gate-Driven Effect on ESD Protection Circuits in Deep-Submicron CMOS ProcessesMing-Dou Ker, Wen-Yi Chen. isqed 2004: 445-450 [doi]
- A gate-coupled PTLSCR/NTLSCR ESD protection circuit for deep-submicron low-voltage CMOS ICsMing-Dou Ker, Hun-Hsien Chang, Chung-Yu Wu. jssc, 32(1):38-51, 1997. [doi]
- Implementation of Initial-On ESD Protection Concept With PMOS-Triggered SCR Devices in Deep-Submicron CMOS TechnologyMing-Dou Ker, Shih-Hung Chen. jssc, 42(5):1158-1168, 2007. [doi]
- Capacitor-couple ESD protection circuit for deep-submicron low-voltage CMOS ASICMing-Dou Ker, Chung-Yu Wu, Tao Cheng, Hun-Hsien Chang. tvlsi, 4(3):307-321, 1996. [doi]
- ESD protection for CMOS output buffer by using modified LVTSCR devices with high trigger currentMing-Dou Ker. jssc, 32(8):1293-1296, 1997. [doi]