A 30 ns 16 Mb 2 b/cell Embedded Flash with Ramped Gate Time-Domain Sensing Scheme for Automotive Application - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Sebastian Kiesel, Thomas Kern, Bernhard Wicht, Helmut Graeb. A 30 ns 16 Mb 2 b/cell Embedded Flash with Ramped Gate Time-Domain Sensing Scheme for Automotive Application. In International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2019, Hsinchu, Taiwan, April 22-25, 2019. pages 1-4, IEEE, 2019. [doi]

This author has not been identified. Look up 'Sebastian Kiesel' in GoogleThis author has not been identified. Look up 'Thomas Kern' in GoogleThis author has not been identified. Look up 'Bernhard Wicht' in GoogleThis author has not been identified. Look up 'Helmut Graeb' in Google

runs on WebDSL