Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide - researchr publication authors

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Jongwoo Kim, Hyungjun Jo, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, Hyungcheol Shin. Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide. IEICE Electronic Express, 19(24):20220465, 2022. [doi]

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