Jongwoo Kim, Hyungjun Jo, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, Hyungcheol Shin. Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide. IEICE Electronic Express, 19(24):20220465, 2022. [doi]
@article{KimJCSSS22,
title = {Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide},
author = {Jongwoo Kim and Hyungjun Jo and Yonggyu Cho and Hyunyoung Shim and Jaesung Sim and Hyungcheol Shin},
year = {2022},
doi = {10.1587/elex.19.20220465},
url = {https://doi.org/10.1587/elex.19.20220465},
researchr = {https://researchr.org/publication/KimJCSSS22},
cites = {0},
citedby = {0},
journal = {IEICE Electronic Express},
volume = {19},
number = {24},
pages = {20220465},
}