Jongwoo Kim, Hyungjun Jo, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, Hyungcheol Shin. Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide. IEICE Electronic Express, 19(24):20220465, 2022. [doi]
Abstract is missing.