Jin Ki Kim, Koji Sakui, Sung-Soo Lee, Yasuo Itoh, Suk-Chon Kwon, Kazuhisa Kanazawa, Ki Jun Lee, Hiroshi Nakamura, Kang-Young Kim, Toshihiko Himeno, Jang-Rae Kim, Kazushige Kanda, Tae-Sung Jung, Yoichi Oshima, Kang-Deog Suh, Kazuhiko Hashimoto, Sung-Tae Ahn, Junichi Miyamoto. A 120-mm/sup 2/ 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed. J. Solid-State Circuits, 32(5):670-680, 1997. [doi]
Abstract is missing.