Flexible test mode approach for 256-Mb DRAM - researchr publication authors

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Toshiaki Kirihata, Hing Wong, John K. DeBrosse, Yohji Watanabe, Takahiko Hara, Munehiro Yoshida, Matthew R. Wordeman, Shuso Fujii, Yoshiaki Asao, Bo Krsnik. Flexible test mode approach for 256-Mb DRAM. J. Solid-State Circuits, 32(10):1525-1534, 1997. [doi]

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