John K. DeBrosse - researchr alias

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Viewing Publication 1 - 11 from 11

2015

A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensingJohn K. DeBrosse, Thomas M. Maffitt, Yutaka Nakamura, Guenole Jan, Po-Kang Wang. cicc 2015: 1-3 [doi]

2006

Design considerations for MRAMThomas M. Maffitt, John K. DeBrosse, J. A. Gabric, Earl T. Gow, Mark C. Lamorey, John S. Parenteau, Dennis R. Willmott, Mark A. Wood, William J. Gallagher. ibmrd, 50(1):25-40, 2006. [doi]

2005

2004

A high-speed 128-kb MRAM core for future universal memory applicationsJohn K. DeBrosse, Dietmar Gogl, Alexander Bette, Heinz Hoenigschmid, Raphael Robertazzi, Christian Arndt, Daniel Braun, D. Casarotto, Robert Havreluk, Stefan Lammers, Werner Obermaier, William R. Reohr, Hans Viehmann, William J. Gallagher, Gerhard Müller. jssc, 39(4):678-683, 2004. [doi]

2002

Challenges and future directions for the scaling of dynamic random-access memory (DRAM)Jack A. Mandelman, Robert H. Dennard, Gary B. Bronner, John K. DeBrosse, Rama Divakaruni, Yujun Li, Carl J. Raden. ibmrd, 46(2-3):187-222, 2002. [doi]

2000

1998

2, four- and eight-bank, 256-Mb SDRAM with single-sided stitched WL architectureToshiaki Kirihata, Martin Gall, Kohji Hosokawa, Jean-Marc Dortu, Hing Wong, Peter Pfefferl, Brian L. Ji, Oliver Weinfurtner, John K. DeBrosse, Hartmud Terletzki, Manfred Selz, Wayne Ellis, Matthew R. Wordeman, Oliver Kiehl. jssc, 33(11):1711-1719, 1998. [doi]

1997

Flexible test mode approach for 256-Mb DRAMToshiaki Kirihata, Hing Wong, John K. DeBrosse, Yohji Watanabe, Takahiko Hara, Munehiro Yoshida, Matthew R. Wordeman, Shuso Fujii, Yoshiaki Asao, Bo Krsnik. jssc, 32(10):1525-1534, 1997. [doi]

1996

1995

The evolution of IBM CMOS DRAM technologyEric Adler, John K. DeBrosse, Stephen F. Geissler, Steven J. Holmes, Mark D. Jaffe, Jeffrey B. Johnson, Charles W. Koburger III, Jerome B. Lasky, Brian Lloyd, Glen L. Miles, James S. Nakos, Wendell P. Noble Jr., Steven H. Voldman, Michael Armacost, Richard Ferguson. ibmrd, 39(1-2):167-188, 1995. [doi]

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