Yachen Kong, Meng Zhang 0014, Xuepeng Zhan, Rui Cao, Jiezhi Chen. Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions. IEEE Trans. on CAD of Integrated Circuits and Systems, 39(11):4042-4051, 2020. [doi]
@article{KongZZCC20,
title = {Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions},
author = {Yachen Kong and Meng Zhang 0014 and Xuepeng Zhan and Rui Cao and Jiezhi Chen},
year = {2020},
doi = {10.1109/TCAD.2020.3025514},
url = {https://doi.org/10.1109/TCAD.2020.3025514},
researchr = {https://researchr.org/publication/KongZZCC20},
cites = {0},
citedby = {0},
journal = {IEEE Trans. on CAD of Integrated Circuits and Systems},
volume = {39},
number = {11},
pages = {4042-4051},
}