Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices

Nagothu Karmel Kranthi, B. Sampath Kumar, Akram A. Salman, Gianluca Boselli, Mayank Shrivastava. Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-5, IEEE, 2020. [doi]

@inproceedings{KranthiKSBS20,
  title = {Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices},
  author = {Nagothu Karmel Kranthi and B. Sampath Kumar and Akram A. Salman and Gianluca Boselli and Mayank Shrivastava},
  year = {2020},
  doi = {10.1109/IRPS45951.2020.9129624},
  url = {https://doi.org/10.1109/IRPS45951.2020.9129624},
  researchr = {https://researchr.org/publication/KranthiKSBS20},
  cites = {0},
  citedby = {0},
  pages = {1-5},
  booktitle = {2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-3199-3},
}