Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs

Rainer Kraus, Gerhard Knoblinger. Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs. In Proceedings of the IEEE 2002 Custom Integrated Circuits Conference, CICC 2002, Orlando, FL, USA, May 12-15, 2002. pages 209-212, IEEE, 2002. [doi]

Abstract

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