Gerhard Knoblinger - researchr alias

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Viewing Publication 1 - 21 from 21

2021

A 12-b 16-GS/s RF-Sampling Capacitive DAC for Multi-Band Soft Radio Base-Station Applications With On-Chip Transmission-Line Matching Network in 16-nm FinFETDaniel Gruber, Martin Clara, Ramón Sanchez-Perez, Yu-Shan Wang, Christoph Duller, Gerald Rauter, Patrick Torta, Gerhard Knoblinger, Kamran Azadet. jssc, 56(12):3655-3667, 2021. [doi]

2018

2 Area w/ 2D Digital-Pre-Distortion and Package CombinerAntonio Passamani, Davide Ponton, Andreas Wolter, Gerhard Knoblinger, Andrea Bevilacqua. icecsys 2018: 21-24 [doi]

2017

13.9 A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35% PAEAntonio Passamani, Davide Ponton, Edwin Thaller, Gerhard Knoblinger, Andrea Neviani, Andrea Bevilacqua. isscc 2017: 232-233 [doi]

2015

Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAsAntonio Passamani, Davide Ponton, Gerhard Knoblinger, Andrea Bevilacqua. norchip 2015: 1-4 [doi]

Switched state-space model for a switched-capacitor power amplifierStefan Trampitsch, Gerhard Knoblinger, Mario Huemer. iscas 2015: 1478-1481 [doi]

2011

LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS TechnologyDavide Ponton, Gerhard Knoblinger, Andreas Roithmeier, Frederico Cernoia, Marc Tiebout, Michael Fulde, Pierpaolo Palestri. tcas, 58-II(8):467-471, 2011. [doi]

2009

2008

Design of UWB LNA in 45nm CMOS technology: Planar bulk vs. FinFETDavide Ponton, Pierpaolo Palestri, David Esseni, Luca Selmi, Marc Tiebout, Bertrand Parvais, Gerhard Knoblinger. iscas 2008: 2701-2704 [doi]

2007

Transient Variations in Emerging SOI Technologies: Modeling and Impact on Analog/Mixed-Signal CircuitsMichael Fulde, Doris Schmitt-Landsiedel, Gerhard Knoblinger. iscas 2007: 1249-1252 [doi]

Analog design challenges and trade-offs using emerging materials and devicesMichael Fulde, Abdelkarim Mercha, Cedric Gustin, Bertrand Parvais, Vaidyanathan Subramanian, Klaus von Arnim, Florian Bauer, Klaus Schruefer, Doris Schmitt-Landsiedel, Gerhard Knoblinger. esscirc 2007: 123-126 [doi]

Advances in Multi-Gate MOSFET Circuit DesignMichael Fulde, Klaus von Arnim, Christian Pacha, Florian Bauer, Christian Russ, Domagoj Siprak, Wade Xiong, Andrew Marshall, C. Rinn Cleavelin, Klaus Schruefer, Doris Schmitt-Landsiedel, Gerhard Knoblinger. icecsys 2007: 186-189 [doi]

SUB-45nm Technology and Design ChallengesGerhard Knoblinger, James Tschanz, Marcal Pol. isqed 2007: 3 [doi]

Multi-Gate MOSFET DesignGerhard Knoblinger. isqed 2007: 3 [doi]

A merged MuGFET and planar SOI processAndrew Marshall, C. Rinn Cleavelin, Weize Xiong, Christian Pacha, Gerhard Knoblinger, Klaus Von Armin, Thomas Schulz, Klaus Schruefer, Ken Matthews, Wolfgang Molzer, Paul Patruno, Christian Russ. socc 2007: 39-42 [doi]

2006

2002

Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETsRainer Kraus, Gerhard Knoblinger. cicc 2002: 209-212 [doi]

2001

When do we need non-quasistatic CMOS RF-models?Elmar Gondro, Oskar Kowarik, Gerhard Knoblinger, Peter Klein. cicc 2001: 377-380 [doi]

A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS designGerhard Knoblinger, Peter Klein, Marc Tiebout. jssc, 36(5):831-837, 2001. [doi]

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