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Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani. Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 313-316, IEEE, 2014. [doi]

Authors

Valerio Di Lecce

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Roberto Grassi

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Antonio Gnudi

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Elena Gnani

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Susanna Reggiani

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Giorgio Baccarani

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