Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani. Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 313-316, IEEE, 2014. [doi]

@inproceedings{LecceGGGRB14,
  title = {Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation},
  author = {Valerio Di Lecce and Roberto Grassi and Antonio Gnudi and Elena Gnani and Susanna Reggiani and Giorgio Baccarani},
  year = {2014},
  doi = {10.1109/ESSDERC.2014.6948823},
  url = {http://dx.doi.org/10.1109/ESSDERC.2014.6948823},
  researchr = {https://researchr.org/publication/LecceGGGRB14},
  cites = {0},
  citedby = {0},
  pages = {313-316},
  booktitle = {44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014},
  publisher = {IEEE},
  isbn = {978-1-4799-4378-4},
}