A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki Won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Yong-Jin Yoon, Kwang-Suk Yu, Gi-Tae Jeong, Hong-Sik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim. A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput. J. Solid-State Circuits, 43(1):150-162, 2008. [doi]

Abstract

Abstract is missing.