A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki Won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Kwang-Suk Yu, Gitae Jeong, Hong-Sik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim. A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput. In 2007 IEEE International Solid-State Circuits Conference, ISSCC 2007, Digest of Technical Papers, San Francisco, CA, USA, February 11-15, 2007. pages 472-616, IEEE, 2007. [doi]

Abstract

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