Chang-Kyo Lee, Yoon-Joo Eom, Jin-Hee Park, Junha Lee, Hye-Ran Kim, Kihan Kim, Young Choi, Ho-Jun Chang, Jonghyuk Kim, Jong-Min Bang, Seungjun Shin, Hanna Park, Su-Jin Park, Young-Ryeol Choi, Hoon Lee, Kyong-Ho Jeon, Jae Young Lee, Hyo-Joo Ahn, Kyoung-Ho Kim, Jung Sik Kim, Soobong Chang, Hyong-Ryol Hwang, Duyeul Kim, Yoon-Hwan Yoon, Seok-Hun Hyun, Joon Young Park, Yoon-Gyu Song, Youn-Sik Park, Hyuck-Joon Kwon, Seung-Jun Bae, Tae-young Oh, Indal Song, Yong-Cheol Bae, Jung Hwan Choi, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin. 23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme. In 2017 IEEE International Solid-State Circuits Conference, ISSCC 2017, San Francisco, CA, USA, February 5-9, 2017. pages 390-391, IEEE, 2017. [doi]
Abstract is missing.