A 16.8Gbps/channel single-ended transceiver in 65nm CMOS for SiP based DRAM interface on Si-carrier channel - researchr publication authors

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Hyunbae Lee, Taeksang Song, Sangyeon Byeon, Kwanghun Lee, Inhwa Jung, Seongjin Kang, Ohkyu Kwon, Koeun Cheon, Donghwan Seol, Jong-Ho Kang, GunWoo Park, Yunsaing Kim. A 16.8Gbps/channel single-ended transceiver in 65nm CMOS for SiP based DRAM interface on Si-carrier channel. In IEEE Asian Solid-State Circuits Conference, A-SSCC 2014, KaoHsiung, Taiwan, November 10-12, 2014. pages 125-128, IEEE, 2014. [doi]

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