A 16.8Gbps/channel single-ended transceiver in 65nm CMOS for SiP based DRAM interface on Si-carrier channel

Hyunbae Lee, Taeksang Song, Sangyeon Byeon, Kwanghun Lee, Inhwa Jung, Seongjin Kang, Ohkyu Kwon, Koeun Cheon, Donghwan Seol, Jong-Ho Kang, GunWoo Park, Yunsaing Kim. A 16.8Gbps/channel single-ended transceiver in 65nm CMOS for SiP based DRAM interface on Si-carrier channel. In IEEE Asian Solid-State Circuits Conference, A-SSCC 2014, KaoHsiung, Taiwan, November 10-12, 2014. pages 125-128, IEEE, 2014. [doi]

@inproceedings{LeeSBLJKKCSKPK14,
  title = {A 16.8Gbps/channel single-ended transceiver in 65nm CMOS for SiP based DRAM interface on Si-carrier channel},
  author = {Hyunbae Lee and Taeksang Song and Sangyeon Byeon and Kwanghun Lee and Inhwa Jung and Seongjin Kang and Ohkyu Kwon and Koeun Cheon and Donghwan Seol and Jong-Ho Kang and GunWoo Park and Yunsaing Kim},
  year = {2014},
  doi = {10.1109/ASSCC.2014.7008876},
  url = {http://dx.doi.org/10.1109/ASSCC.2014.7008876},
  researchr = {https://researchr.org/publication/LeeSBLJKKCSKPK14},
  cites = {0},
  citedby = {0},
  pages = {125-128},
  booktitle = {IEEE Asian Solid-State Circuits Conference, A-SSCC 2014, KaoHsiung, Taiwan, November 10-12, 2014},
  publisher = {IEEE},
  isbn = {978-1-4799-4090-5},
}