A 16.8 Gbps/Channel Single-Ended Transceiver in 65 nm CMOS for SiP-Based DRAM Interface on Si-Carrier Channel

Hyunbae Lee, Taeksang Song, Sangyeon Byeon, Kwanghun Lee, Inhwa Jung, Seongjin Kang, Ohkyu Kwon, Koeun Cheon, Donghwan Seol, Jong-Ho Kang, GunWoo Park, Yunsaing Kim. A 16.8 Gbps/Channel Single-Ended Transceiver in 65 nm CMOS for SiP-Based DRAM Interface on Si-Carrier Channel. J. Solid-State Circuits, 50(11):2613-2624, 2015. [doi]

Abstract

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